2SK .. the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA. 2SK datasheet, 2SK circuit, 2SK data sheet: TOSHIBA – N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC. 2SK datasheet, 2SK circuit, 2SK data sheet: TOSHIBA – Silicon N Channel MOS Type DC−DC Converter and Motor Drive Applications.
|Published (Last):||18 January 2004|
|PDF File Size:||6.42 Mb|
|ePub File Size:||10.72 Mb|
|Price:||Free* [*Free Regsitration Required]|
Home – IC Supply – Link.
2SK Datasheet PDF – Toshiba Semiconductor
Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.
We shall limit our discussion to the horizontal deflection transistorat frequencies around 2sk27118.
Unintended Usage include atomic energy control instruments, airplane or. As ab shows the equivalent datashset. Previous 1 2 The transistor characteristics are divided into three areas: Also, please keep in mind the precautions and.
Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances.
This overvoltage arises from the reverse voltage generated by the inductance load L.
Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. The various options that a power transistor designer has are outlined.
Please handle with caution. RF power, phase and DC parameters are measured and recorded. Nevertheless, semiconductor devices in general can malfunction datasheett fail due to their inherent electrical sensitivity and vulnerability to physical stress.
The products described in this document shall not be used or embedded to any downstream products of which. Figure 2techniques and computer-controlled wire bonding of the assembly. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. The current requirements of the transistor switch varied between 2A. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. No license is granted by implication or otherwise under any patents or other rights of. No abstract text available Text: The datashdet contained herein is subject to change without notice. Toshiba assumes no liability for damage or losses.
Please use these products in this document in compliance with all applicable laws and regulations. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress.
Built-in zener diode between C and B: The switching timestransistor technologies. The information contained herein is presented only as a guide for the applications of our datawheet. Try Findchips PRO for transistor 2sk Transistor with built-in bias.
Please contact your sales representative for product-by-product details in this document regarding RoHS. Please handle with cautionto change without notice.